The sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor.

نویسندگان

  • Kyeong-Ju Moon
  • Tae Il Lee
  • Sang-Hoon Lee
  • Jae-Min Myoung
چکیده

A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na(+) ions was used to create a field-effect transistor based memory device. Addition of Na(+) ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.

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عنوان ژورنال:
  • Chemical communications

دوره 50 31  شماره 

صفحات  -

تاریخ انتشار 2014